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Photodegradation in siliconThe state of knowledge concerning the following defects in silicon is briefly surveyed: substitutional impurities; vacancy-related defects; interstitial-related defects; defect pairs. Although a great deal is known, it is argued that not enough is yet known to model radiation damage production in the bulk or in the vicinity of the junction of a solar cell. The results on photon degradation (and enhancement) of solar cells are then reviewed, and it is suggested that defect pairs may be the defects responsible. Mechanisms for photon-induced dissociation of pairs are discussed but a more detailed understanding awaits the identification of the actual defects.
Document ID
19810025699
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Corbett, J. W.
(State Univ. of New York Albany, NY, United States)
Jaworowski, A.
(State Univ. of New York Albany, NY, United States)
Kleinhenz, R. L.
(State Univ. of New York Albany, NY, United States)
Pierce, C. B.
(State Univ. of New York Albany, NY, United States)
Wilsey, N. D.
(New York, State University Albany, N.Y., United States)
Date Acquired
August 11, 2013
Publication Date
September 1, 1980
Subject Category
Solid-State Physics
Accession Number
81A10103
Funding Number(s)
CONTRACT_GRANT: NSG-3095
CONTRACT_GRANT: N00014-75-C-0919
Distribution Limits
Public
Copyright
Other

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