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Record 6 of 2400
XPS studies of structure-induced radiation effects at the Si/SiO2 interface. [X ray Photoelectron Spectroscopy]
Author and Affiliation:
Grunthaner, F. J.(Jet Propulsion Lab., California Inst. of Tech., Pasadena, CA, United States)
Lewis, B. F.(Jet Propulsion Lab., California Inst. of Tech., Pasadena, CA, United States)
Zamini, N.(Jet Propulsion Lab., California Inst. of Tech., Pasadena, CA, United States)
Maserjian, J.(California Institute of Technology, Jet Propulsion Laboratory, Pasadena, Calif., United States)
Madhukar, A.(Southern California, University, Los Angeles, Calif., United States)
Abstract: The interfacial structures of radiation hard and soft oxides grown by dry and wet processes on silicon substrates have been examined by high-resolution X-ray photoelectron spectroscopy. It is found that the primary difference in the local atomic structure at the Si/SiO2 interface is the significantly higher concentration of strained 120 deg SiO2 bonds and SiO interfacial species in soft samples. Results of in situ radiation damage experiments using low energy electrons (0-20 eV) are reported which correlate with the presence of a strained layer of SiO2 (20 A) at the interface. The results are interpreted in terms of a structural model for hole and electron trap generation by ionizing radiation.
Publication Date: Dec 01, 1980
Document ID:
19810035514
(Acquired Nov 30, 1995)
Accession Number: 81A19918
Subject Category: SOLID-STATE PHYSICS
Document Type: Journal Article
Publisher Information: United States
Contract/Grant/Task Num: NAS7-100; NBS ORDER 611377
Financial Sponsor: NASA; United States
Organization Source: Jet Propulsion Lab., California Inst. of Tech.; Pasadena, CA, United States
University of Southern California; Los Angeles, CA, United States
Description: 7p; In English
Distribution Limits: Unclassified; Publicly available; Unlimited
Rights: Copyright
NASA Terms: METAL OXIDE SEMICONDUCTORS; PHOTOELECTRON SPECTROSCOPY; RADIATION EFFECTS; SILICON OXIDES; X RAY SPECTROSCOPY; CRYSTAL GROWTH; INTERFACES
Imprint And Other Notes: (IEEE, U.S. Defense Nuclear Agency, Jet Propulsion Laboratory, and DOE, Annual Conference on Nuclear and Space Radiation Effects, 17th, Ithaca, N.Y., July 15-18, 1980.) IEEE Transactions on Nuclear Science, vol. NS-27, Dec. 1980, p. 1640-1646. Research sponsored by the U.S. Defense Nuclear Agency and DARPA;
Availability Source: Other Sources
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