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Determination of lifetimes and recombination currents in p-n junction solar cells, diodes, and transistorsNew methods are presented and illustrated that enable the accurate determination of the diffusion length of minority carriers in the narrow regions of a solar cell or a diode. Other methods now available are inaccurate for the desired case in which the width of the region is less than the diffusion length. Once the diffusion length is determined by the new methods, this result can be combined with measured dark I-V characteristics and with small-signal admittance characteristics to enable determination of the recombination currents in each quasi-neutral region of the cell - for example, in the emitter, low-doped base, and high-doped base regions of the BSF (back-surface-field) cell. This approach leads to values for the effective surface recombination velocity of the high-low junction forming the back-surface field of BSF cells or the high-low emitter junction of HLE cells. These methods are also applicable for measuring the minority-carrier lifetime in thin epitaxial layers grown on substrates with opposite conductivity type.
Document ID
19810035607
Document Type
Reprint (Version printed in journal)
Authors
Neugroschel, A.
(Florida, University Gainesville, Fla., United States)
Date Acquired
August 11, 2013
Publication Date
January 1, 1981
Publication Information
Publication: IEEE Transactions on Electron Devices
Volume: ED-28
Subject Category
Electronics And Electrical Engineering
Accession Number
81A20011
Funding Number(s)
CONTRACT_GRANT: NSG-3018
Distribution Limits
Public
Copyright
Other

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