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Removal of the high-resistivity layer at the n on n/+/ liquid phase epitaxial GaAs layer-substrate interface by controlled in situ etch-back
Document ID
19810037758
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
doi:10.1063/1.327596
Authors
Seabaugh, A. C. (Virginia Univ. Charlottesville, VA, United States)
Mattauch, R. J. (Virginia, University Charlottesville, Va., United States)
Date Acquired
August 11, 2013
Publication Date
December 1, 1980
Publication Information
Publication: Journal of Applied Physics
Volume: 51
Subject Category
Solid-State Physics
Accession Number
81A22162
Funding Number(s)
CONTRACT_GRANT: NAS5-24218
CONTRACT_GRANT: NSF ENG-78-05356
CONTRACT_GRANT: JPL-954076-11
Distribution Limits
Public
Copyright
Other

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