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Optically induced bistable states in metal/tunnel-oxide/semiconductor /MTOS/ junctionsA new switching phenomenon in metal-oxide semiconductor tunnel junction has been discovered. With a sufficiently large negative bias applied to the electrode, incident visible light of intensity greater than about 1 microW/sq cm causes the reverse-biased junction to switch from a low-current to a high-current state. It is believed that hot-electron-induced impact ionization provides the positive feedback necessary for switching, and causes the junction to remain in its high-current state after the optical excitation is removed. The junction may be switched back to the low-current state electrically. The basic junction characteristics have been measured, and a simple model for the switching phenomenon has been developed.
Document ID
19810040011
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Lai, S. K. (Yale Univ. New Haven, CT, United States)
Dressendorfer, P. V. (Yale Univ. New Haven, CT, United States)
Ma, T. P. (Yale Univ. New Haven, CT, United States)
Barker, R. C. (Yale University New Haven, Conn., United States)
Date Acquired
August 11, 2013
Publication Date
January 1, 1981
Publication Information
Publication: Applied Physics Letters
Volume: 38
Subject Category
ELECTRONICS AND ELECTRICAL ENGINEERING
Distribution Limits
Public
Copyright
Other