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Intensity analysis of XPS spectra to determine oxide uniformity - Application to SiO2/Si interfacesA simple method of determining oxide uniformity is derived which requires no knowlege of film thickness, escape depth, or film composition. The method involves only the measurement of oxide and substrate intensities and is illustrated by analysis of XPS spectral data for thin SiO2 films grown both thermally and by low-temperature chemical vapor deposition on monocrystalline Si. A region 20-30 A thick is found near the SiO2/Si interface on thermally oxidized samples which has an inelastic mean free path 35% less than that found in the bulk oxide. This is interpreted as being due to lattice mismatch resulting in a strained region which is structurally, but not stoichiometrically, distinct from the bulk oxide.
Document ID
19810040216
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Vasquez, R. P.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Grunthaner, F. J.
(California Institute of Technology, Jet Propulsion Laboratory, Pasadena Calif., United States)
Date Acquired
August 11, 2013
Publication Date
October 1, 1980
Publication Information
Publication: Surface Science
Volume: 99
Issue: 3, Oc
Subject Category
Chemistry And Materials (General)
Accession Number
81A24620
Funding Number(s)
CONTRACT_GRANT: NAS7-100
CONTRACT_GRANT: NBS ORDER 611377
Distribution Limits
Public
Copyright
Other

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