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Silicon solar cells with high open-circuit voltageOpen-circuit voltages as high as 0.645 V (AM0-25 C) have been obtained by a new process developed for low-resistivity silicon. The method utilizes high-dose phosphorus implantation, followed by furnace annealing and simultaneous oxide growth to form high-efficiency, shallow junctions. The effect of the thermally grown oxide is a reduction of surface recombination velocity; the oxide also acts as a moderately efficient AR coating. Boron doped silicon with resistivities from 0.1 to 0.3 ohm-cm has been processed according to this sequence; results show highest open-circuit voltage is attained with 0.1-ohm-cm starting material. The effects of bandgap narrowing, caused by high doping concentrations in the junction, were also investigated by implanting phosphorus over a wide range of dose levels.
Document ID
19810042685
Acquisition Source
Legacy CDMS
Document Type
Conference Proceedings
Authors
Minnucci, J. A.
(Spire Corp. Bedford, MA, United States)
Matthei, K. W.
(Spire Corp. Bedford, MA, United States)
Kirkpatrick, A. R.
(Spire Corp. Bedford, MA, United States)
Mccrosky, A.
(Spire Corp. Bedford, Mass., United States)
Date Acquired
August 11, 2013
Publication Date
January 1, 1980
Subject Category
Energy Production And Conversion
Meeting Information
Meeting: Photovoltaic Specialists Conference
Location: San Diego, CA
Start Date: January 7, 1980
End Date: January 10, 1980
Accession Number
81A27089
Funding Number(s)
CONTRACT_GRANT: NAS3-20823
Distribution Limits
Public
Copyright
Other

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