Silicon solar cells with high open-circuit voltageOpen-circuit voltages as high as 0.645 V (AM0-25 C) have been obtained by a new process developed for low-resistivity silicon. The method utilizes high-dose phosphorus implantation, followed by furnace annealing and simultaneous oxide growth to form high-efficiency, shallow junctions. The effect of the thermally grown oxide is a reduction of surface recombination velocity; the oxide also acts as a moderately efficient AR coating. Boron doped silicon with resistivities from 0.1 to 0.3 ohm-cm has been processed according to this sequence; results show highest open-circuit voltage is attained with 0.1-ohm-cm starting material. The effects of bandgap narrowing, caused by high doping concentrations in the junction, were also investigated by implanting phosphorus over a wide range of dose levels.
Document ID
19810042685
Acquisition Source
Legacy CDMS
Document Type
Conference Proceedings
Authors
Minnucci, J. A. (Spire Corp. Bedford, MA, United States)
Matthei, K. W. (Spire Corp. Bedford, MA, United States)
Kirkpatrick, A. R. (Spire Corp. Bedford, MA, United States)
Mccrosky, A. (Spire Corp. Bedford, Mass., United States)