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An all-plated, low cost contact system for silicon solar cellsThe plating sequences Pd-Cr-Cu and Pd-Ni-Cu are demonstrated. The surface was sensitized with a 50 A-thick Pd layer obtained from an immersion bath. After 15 min heating at 400 C in N2, a thin barrier layer of either Cr or Ni was deposited from electroless baths operated at temperatures around 90 C. The sintering process was repeated, and a thin copper layer of 500 A was deposited by electroless means. An electrolytic copper bath was used to build the copper layer to 3-4 micron thicknesses. Cells with good I-V curves were obtained, and the all-plated contacts had good adhesion. Preliminary cost estimates show that the process costs approximately 12 cents per watt excluding the cost of the masking procedure.
Document ID
19810042793
Acquisition Source
Legacy CDMS
Document Type
Conference Proceedings
Authors
Tanner, D. P.
(Applied Solar Energy Corp. City of Industry, CA, United States)
Iles, P. A.
(Applied Solar Energy Corp. City of Industry, Calif., United States)
Alexander, P.
(California Institute of Technology, Jet Propulsion Laboratory, Pasadena; Applied Solar Energy Corp. City of Industry, Calif., United States)
Date Acquired
August 11, 2013
Publication Date
January 1, 1980
Subject Category
Engineering (General)
Meeting Information
Meeting: Photovoltaic Specialists Conference
Location: San Diego, CA
Start Date: January 7, 1980
End Date: January 10, 1980
Accession Number
81A27197
Funding Number(s)
CONTRACT_GRANT: JPL-955244
Distribution Limits
Public
Copyright
Other

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