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Low-cost ion implantation and annealing technology for solar cellsIon implantation and thermal annealing techniques for processing junctions and back surface layers in solar cells are discussed. Standard 10 keV (31)p(+) junction implants and 25 keV (11)B(+) back surface implants in combination with three-step furnace annealing are used for processing a range of silicon materials and device structures. Cells with efficiencies up to 16.5% AM1 are being produced, and large-area terrestrial cells with implanted junctions and back fields being fabricated in pilot production exhibit average efficiencies in excess of 15% AM1. Thermal annealing methods for removal of the radiation damage caused by implantation should be replaced by transient processing techniques in future production. Design studies have been completed for solar cell processing implanters to support 10 MW/yr and 100 MW/yr production lines, and analyses indicate that implantation costs can be reduced to approximately 1 cent/watt.
Document ID
19810042797
Acquisition Source
Legacy CDMS
Document Type
Conference Proceedings
Authors
Kirkpatrick, A. H.
(Spire Corp. Bedford, MA, United States)
Minnucci, J. A.
(Spire Corp. Bedford, MA, United States)
Greenwald, A. C.
(Spire Corp. Bedford, Mass., United States)
Date Acquired
August 11, 2013
Publication Date
January 1, 1980
Subject Category
Engineering (General)
Meeting Information
Meeting: Photovoltaic Specialists Conference
Location: San Diego, CA
Start Date: January 7, 1980
End Date: January 10, 1980
Accession Number
81A27201
Distribution Limits
Public
Copyright
Other

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