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radiation damage in lithium-counterdoped n/p silicon solar cellsThe radiation resistance and low-temperature annealing properties of lithium-counterdoped n(+)-p silicon solar cells are investigated. Cells fabricated from float zone and Czochralski grown silicon were irradiated with 1 MeV electrons and their performance compared to that of 0.35 ohm-cm control cells. The float zone cells demonstrated superior radiation resistance compared to the control cells, while no improvement was noted for the Czochralski grown cells. Annealing kinetics were found to lie between first and second order for relatively short times, and the most likely annealing mechanism was found to be the diffusion of lithium to defects with the subsequent neutralization of defects by combination with lithium. Cells with zero lithium gradients exhibited the best radiation resistance.
Document ID
19810042800
Document Type
Conference Proceedings
Authors
Hermann, A. M.
(NASA Lewis Research Center Cleveland, OH, United States)
Swartz, C. K.
(NASA Lewis Research Center Cleveland, OH, United States)
Brandhorst, H. W., Jr.
(NASA Lewis Research Center Cleveland, OH, United States)
Weinberg, I.
(NASA Lewis Research Center Cleveland, Ohio, United States)
Date Acquired
August 11, 2013
Publication Date
January 1, 1980
Subject Category
ENERGY PRODUCTION AND CONVERSION
Meeting Information
Photovoltaic Specialists Conference(San Diego, CA)
Distribution Limits
Public
Copyright
Other