Radiation damage annealing mechanisms and possible low temperature annealing in silicon solar cellsDeep level transient spectroscopy and the Shockley-Read-Hall recombination theory are used to identify the defect responsible for reverse annealing in 2 ohm-cm n+/p silicon solar cells. This defect, with energy level at Ev + 0.30 eV, has been tentatively identified as a boron-oxygen-vacancy complex. It has been also determined by calculation that the removal of this defect could result in significant annealing at temperatures as low as 200 C for 2 ohm-cm and lower resistivity cells.
Weinberg, I. (NASA Lewis Research Center Cleveland, OH, United States)
Swartz, C. K. (NASA Lewis Research Center Cleveland, Ohio, United States)