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Radiation damage annealing mechanisms and possible low temperature annealing in silicon solar cellsDeep level transient spectroscopy and the Shockley-Read-Hall recombination theory are used to identify the defect responsible for reverse annealing in 2 ohm-cm n+/p silicon solar cells. This defect, with energy level at Ev + 0.30 eV, has been tentatively identified as a boron-oxygen-vacancy complex. It has been also determined by calculation that the removal of this defect could result in significant annealing at temperatures as low as 200 C for 2 ohm-cm and lower resistivity cells.
Document ID
19810042803
Document Type
Conference Proceedings
Authors
Weinberg, I.
(NASA Lewis Research Center Cleveland, OH, United States)
Swartz, C. K.
(NASA Lewis Research Center Cleveland, Ohio, United States)
Date Acquired
August 11, 2013
Publication Date
January 1, 1980
Subject Category
Spacecraft Propulsion And Power
Meeting Information
Photovoltaic Specialists Conference(San Diego, CA)
Distribution Limits
Public
Copyright
Other
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