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High temperature properties of GaAlAs/GaAs heteroface solar cellsThe properties of p-GaAlAs/p-GaAs/n-GaAs heteroface solar cells were determined in the temperature range from 25 C to 350 C. Illumination air mass zero (AM0) current-voltage measurements show that the short circuit current increases as a function of temperature up to 210 C and then decreases up to 350 C. The open circuit voltage and fill factor decrease linearly with increasing temperature. The spectral response shifts toward higher wavelengths with increasing temperature.
Document ID
19810042838
Acquisition Source
Legacy CDMS
Document Type
Conference Proceedings
Authors
Walker, G. H.
(NASA Langley Research Center Hampton, VA, United States)
Conway, E. J.
(NASA Langley Research Center Hampton, Va., United States)
Hong, K. H.
(NASA Langley Research Center Hampton, VA, United States)
Heinbockel, J. H.
(Old Dominion University Norfolk, Va., United States)
Date Acquired
August 11, 2013
Publication Date
January 1, 1980
Subject Category
Energy Production And Conversion
Meeting Information
Meeting: Photovoltaic Specialists Conference
Location: San Diego, CA
Start Date: January 7, 1980
End Date: January 10, 1980
Accession Number
81A27242
Distribution Limits
Public
Copyright
Other

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