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The 'depletion layer' of amorphous p-n junctionsIt is shown that within reasonable approximations for the density of state distribution within the mobility gap of a:Si, a one-to-one correspondence exists between the electric field distribution in the transition region of an amorphous p-n junction and that in the depletion layer of a crystalline p-n junction. Thus it is inferred that the depletion layer approximation which leads to a parabolic potential distribution within the depletion layer of crystalline junctions also constitutes a fair approximation in the case of amorphous junctions. This fact greatly simplifies an analysis of solid-state electronic devices based on amorphous material (i.e., solar cells).
Document ID
19810046598
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Von Roos, O.
(California Institute of Technology, Jet Propulsion Laboratory, Pasadena Calif., United States)
Date Acquired
August 11, 2013
Publication Date
February 1, 1981
Publication Information
Publication: Journal of Applied Physics
Volume: 52
Subject Category
Solid-State Physics
Accession Number
81A31002
Distribution Limits
Public
Copyright
Other

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