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Wavelength-modulated photocapacitance spectroscopyDerivative deep-level spectroscopy was achieved with wavelength-modulated photocapacitance employing MOS structures and Schottky barriers. The energy position and photoionization characteristics of deep levels of melt-grown GaAs and the Cr level in high-resistivity GaAs were determined. The advantages of this method over existing methods for deep-level spectroscopy are discussed.
Document ID
19810048192
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Kamieniecki, E. (Massachusetts Inst. of Tech. Cambridge, MA, United States)
Lagowski, J. (Massachusetts Inst. of Tech. Cambridge, MA, United States)
Gatos, H. C. (MIT Cambridge, Mass., United States)
Date Acquired
August 11, 2013
Publication Date
March 1, 1980
Publication Information
Publication: Journal of Applied Physics
Volume: 51
Subject Category
SOLID-STATE PHYSICS
Distribution Limits
Public
Copyright
Other