LPE growth of 1.3 micron InGaAsP CW lasers on /110/ InP substrates

A description is presented of the liquid-phase epitaxial (LPE) growth of high-quality InGaAsP/InP continuous-wave (CW) laser structures on (110) InP substrates using conventional LPE without the need for special growth procedures. Double heterojunction laser structures were grown using the LPE supercooling method with a horizontal sliding boat. Low broad-area current densities (970 A/sq cm) and CW operation achieved at room temperature indicate that results comparable to up-to-date devices may be achieved. The inherent tendency for surface planarity maintenance due to the perfect surface stoichiometry of the (110) surface is a feature that may lend itself to the generation of improved interface growth in quaternary III-V and related semiconductor alloy systems. The similar cross-sectional appearance of structures grown on (110) and (100) orientations show that conventional LPE can be used with (110) surface planes without introducing special growth procedures.