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Mutiple Czochralski growth of silicon crystals from a single crucibleAn apparatus for the Czochralski growth of silicon crystals is presented which is capable of producing multiple ingots from a single crucible. The growth chamber features a refillable crucible with a water-cooled, vacuum-tight isolation valve located between the pull chamber and the growth furnace tank which allows the melt crucible to always be at vacuum or low argon pressure when retrieving crystal or introducing recharge polysilicon feed stock. The grower can thus be recharged to obtain 100 kg of silicon crystal ingots from one crucible, and may accommodate crucibles up to 35 cm in diameter. Evaluation of the impurity contents and I-V characteristics of solar cells fabricated from seven ingots grown from two crucibles reveals a small but consistent decrease in cell efficiency from 10.4% to 9.6% from the first to the fourth ingot made in a single run, which is explained by impurity build-up in the residual melt. The crystal grower thus may offer economic benefits through the extension of crucible lifetime and the reduction of furnace downtime.
Document ID
Document Type
Reprint (Version printed in journal)
Lane, R. L.
(Kayex Corp. Rochester, N.Y., United States)
Kachare, A. H.
(California Institute of Technology, Jet Propulsion Laboratory, Pasadena Calif., United States)
Date Acquired
August 11, 2013
Publication Date
January 1, 1980
Publication Information
Publication: Journal of Crystal Growth
Volume: 50
Subject Category
Solid-State Physics
Accession Number
Funding Number(s)
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