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Minority carrier diffusion lengths and absorption coefficients in silicon sheet materialMost of the methods which have been developed for the measurement of the minority carrier diffusion length of silicon wafers require that the material have either a Schottky or an ohmic contact. The surface photovoltage (SPV) technique is an exception. The SPV technique could, therefore, become a valuable diagnostic tool in connection with current efforts to develop low-cost processes for the production of solar cells. The technique depends on a knowledge of the optical absorption coefficient. The considered investigation is concerned with a reevaluation of the absorption coefficient as a function of silicon processing. A comparison of absorption coefficient values showed these values to be relatively consistent from sample to sample, and independent of the sample growth method.
Document ID
19810055126
Document Type
Conference Proceedings
Authors
Dumas, K. A. (California Institute of Technology, Jet Propulsion Laboratory, Pasadena CA, United States)
Swimm, R. T. (Southern California, University Los Angeles, CA, United States)
Date Acquired
August 11, 2013
Publication Date
January 1, 1980
Subject Category
SOLID-STATE PHYSICS
Meeting Information
Seminar on Role of electro-optics in photovoltaic energy conversion(San Diego, CA)
Funding Number(s)
CONTRACT_GRANT: NAS7-100
Distribution Limits
Public
Copyright
Other