NASA Logo

NTRS

NTRS - NASA Technical Reports Server

Back to Results
Oxide Control for Silicon Crystal GrowthWeb dendrite growth process pulls sheet of newly crystallized silicon from molten silicon. Jets of argon pull outside gas into melt cavity, preventing silicon oxide from passing through heat-shield hold and depositing on it. Generated by aspirators, reversed flow is used in web dendrite process, which produces sheets of single-crystal silicon for low-cost solar cells.
Document ID
19820000112
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Wehrli, H. A. I.
(Westinghouse Electric Corp.)
Date Acquired
August 10, 2013
Publication Date
December 1, 1982
Publication Information
Publication: NASA Tech Briefs
Volume: 6
Issue: 4
ISSN: 0145-319X
Subject Category
Fabrication Technology
Report/Patent Number
NPO-15199
Accession Number
82B10112
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

Available Downloads

There are no available downloads for this record.
No Preview Available