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Etching and Growth of GaAsIn-place process for etching and growth of gallium arsenide calls for presaturation of etch and growth melts by arsenic source crystal. Procedure allows precise control of thickness of etch and newly grown layer on substrate. Etching and deposition setup is expected to simplify processing and improve characteristics of gallium arsenide lasers, high-frequency amplifiers, and advanced integrated circuits.
Document ID
19820000235
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Seabaugh, A. C. (University of Virginia)
Mattauch, R., J. (University of Virginia)
Date Acquired
August 10, 2013
Publication Date
March 1, 1983
Publication Information
Publication: NASA Tech Briefs
Volume: 7
Issue: 1
ISSN: 0145-319X
Subject Category
Fabrication Technology
Report/Patent Number
NPO-15625
Accession Number
82B10235
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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