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InGaAsP CW Lasers on (110) InP SubstratesQuality InGaAsP/InP CW laser structures grown by conventional liquidphase epitaxy on (110) InP substrates without using special growth procedures. Improved surface quality and grown-layer morphology are attributable to nearlyperfect surface stoichiometry of (110) surface which makes available equal numbers of In and P deposition sites.
Document ID
19820000347
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Hawrylo, F. Z. (RCA Corp.)
Date Acquired
August 10, 2013
Publication Date
May 1, 1983
Publication Information
Publication: NASA Tech Briefs
Volume: 7
Issue: 2
ISSN: 0145-319X
Subject Category
Fabrication Technology
Report/Patent Number
LAR-12840
Accession Number
82B10347
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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