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CLEFT Process for GaAs Solar CellsCLEFT (cleavage of lateral epitaxial films for transfer) process involves growing ultrathin gallium arsenide (GaAs solar cell on much thicker layer of same material). Growth method is completed solar cell easily separated by cleaving from much thicker substrate. Thick substrate is reusable in making additional cells, which reduces cell material cost.
Document ID
19820000349
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Fan, J. C. C. (Massacusetts Institute of Technology)
Bozler, C. O. (Massacusetts Institute of Technology)
Mcclelland, R. W. (Massacusetts Institute of Technology)
Date Acquired
August 10, 2013
Publication Date
May 1, 1983
Publication Information
Publication: NASA Tech Briefs
Volume: 7
Issue: 2
ISSN: 0145-319X
Subject Category
Fabrication Technology
Report/Patent Number
LEW-13912
Accession Number
82B10349
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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