NASA Logo

NTRS

NTRS - NASA Technical Reports Server

Back to Results
Optimization of solar cells for air mass zero operation and a study of solar cells at high temperaturesThe power to weight ratio of GaAs cells can be reduced by fabricating devices using thin GaAs films on low density substrate materials (silicon, glass, plastics). A graphoepitaxy technique was developed which uses fine geometric patterns in the substrate to affect growth. Initial substrates were processed by etching 25 microns deep grooves into 100 oriented wafers; fine-grained polycrystalline GaAs layers 25-50 microns thick were then deposited on these and recrystallization was performed, heating the substrates to above the GaAs melting point in ASH3 atmosphere, resulting in large grain regrowth oriented along the groove dimensions. Experiments with smaller groove depths and spacings were initially encouraging; single large GaAs grains would totally cover one and often two groove fields of 14 groove each spanning several hundred microns. Dielectric coatings on the grooved substrates were also used to modify the growth.
Document ID
19820025379
Acquisition Source
Legacy CDMS
Document Type
Contractor Report (CR)
Authors
Hovel, H. J.
(IBM Watson Research Center Yorktown Heights, NY, United States)
Vernon, S. M.
(IBM Watson Research Center Yorktown Heights, NY, United States)
Date Acquired
September 4, 2013
Publication Date
February 1, 1982
Publication Information
Publisher: NASA. Langley Research Center
Subject Category
Solid-State Physics
Report/Patent Number
NAS 1.26:165862
NASA-CR-165862
Accession Number
82N33255
Funding Number(s)
CONTRACT_GRANT: NAS1-12812
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
No Preview Available