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Lattice defects in semiconducting Hg/1-x/Cd/x/Te alloys. III - Defect structure of undoped Hg0.6Cd0.4TeHall effect measurements were carried out on undoped Hg0.6Cd0.4Te crystals quenched to room temperature subsequent to equilibration at temperatures varying from 450 to 720 C under various partial pressures of Hg. The variation of the hole concentration as a function of the partial pressure of Hg indicates that the native acceptor defects are doubly ionized. Native donor defects are found to be negligible in concentration and the p-type to n-type conversion is shown to be due to residual donors and not due to native donor defects. Thermodynamic constant for the incorporation of the doubly ionized native acceptor defect has been established.
Document ID
19820032202
Document Type
Reprint (Version printed in journal)
Authors
Vydyanath, H. R. (Honeywell Electro-Optics Center Lexington, MA, United States)
Donovan, J. D. (Honeywell Electro-Optics Center Lexington, MA, United States)
Nelson, D. A. (Honeywell Electro-Optics Center Lexington, MA, United States)
Date Acquired
August 10, 2013
Publication Date
December 1, 1981
Publication Information
Publication: Electrochemical Society
Subject Category
SOLID-STATE PHYSICS
Funding Number(s)
CONTRACT_GRANT: NAS8-33245
Distribution Limits
Public
Copyright
Other