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A prediction model for bipolar RAMs in a high energy ion/proton environmentA model has been developed which predicts the relative susceptibility of bipolar RAMs to heavy ion and proton upset. During the course of evaluating this model, physical and electrical variations were also evaluated indicating that the minimum internal signal level is the primary upset susceptibility indicator. Unfortunately, all of the physical and electrical variations expected during a normal product development cycle are in direct opposition to improved high-energy particle upset tolerance. Hence, a trade-off between highly susceptible, low power (medium speed) devices must be made against the less susceptible, higher power (high speed) equivalent device, taking into account the systems trade-off with respect to system power, software, error correction procedures and/or circuit redundancy.
Document ID
19820034744
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Myers, D. K.
(Fairchild Advanced Research and Development Laboratory Palo Alto, CA, United States)
Price, W. E.
(Fairchild Camera and Instrument Corp. Palo Alto, CA, United States)
Nichols, D. K.
(California Institute of Technology, Jet Propulsion Laboratory, Pasadena CA, United States)
Date Acquired
August 10, 2013
Publication Date
December 1, 1981
Subject Category
Electronics And Electrical Engineering
Accession Number
82A18279
Distribution Limits
Public
Copyright
Other

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