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Effects of low temperature periodic annealing on the deep-level defects in 200 keV proton irradiated AlGaAs-GaAs solar cellsThe GaAs solar cell has shown good potential for space applications. However, degradation in performance occurred when the cells were irradiated by high energy electrons and protons in the space environment. The considered investigation is concerned with the effect of periodic thermal annealing on the deep-level defects induced by the 200 keV protons in the AlGaAs-GaAs solar cells. Protons at a fluence of 10 to the 11th P/sq cm were used in the irradiation cycle, while annealing temperatures of 200 C (for 24 hours), 300 C (six hours), and 400 C (six hours) were employed. The most likely candidate for the E(c) -0.71 eV electron trap observed in the 200 keV proton irradiated samples may be due to GaAs antisite, while the observed E(v) +0.18 eV hole trap has been attributed to the gallium vacancy related defect. The obtained results show that periodic annealing in the considered case does not offer any advantages over the one time annealing process.
Document ID
19820034752
Document Type
Reprint (Version printed in journal)
Authors
Li, S. S. (Florida Univ. Gainesville, FL, United States)
Chiu, T. T. (Florida, University Gainesville, FL, United States)
Loo, R. Y. (Hughes Research Laboratories Malibu, CA, United States)
Date Acquired
August 10, 2013
Publication Date
December 1, 1981
Subject Category
ENERGY PRODUCTION AND CONVERSION
Funding Number(s)
CONTRACT_GRANT: NSG-1425
Distribution Limits
Public
Copyright
Other