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Photovoltaic investigation of minority carrier lifetime in the heavily-doped emitter layer of silicon junction solar cellThe results of experiments on the recombination lifetime in a phosphorus diffused N(+) layer of a silicon solar cell are reported. The cells studied comprised three groups of Czochralski grown crystals: boron doped to one ohm-cm, boron doped to 6 ohm-cm, and aluminum doped to one ohm-cm, all with a shunt resistance exceeding 500 kilo-ohms. The characteristic bulk diffusion length of a cell sample was determined from the short circuit current response to light at a wavelength of one micron. The recombination rates were obtained by measurement of the open circuit voltage as a function of the photogeneration rate. The recombination rate was found to be dependent on the photoinjection level, and is positive-field controlled at low photoinjection, positive-field influence Auger recombination at a medium photoinjection level, and negative-field controlled Auger recombination at a high photoinjection level.
Document ID
19820036922
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Ho, C.-T.
(Mobil Tyco Solar Energy Corp. Waltham, MA, United States)
Date Acquired
August 10, 2013
Publication Date
January 1, 1982
Publication Information
Publication: Journal of Applied Physics
Volume: 53
Subject Category
Energy Production And Conversion
Accession Number
82A20457
Funding Number(s)
CONTRACT_GRANT: NAS7-100
CONTRACT_GRANT: JPL-954355
Distribution Limits
Public
Copyright
Other

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