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Vacuum tight quartz ampoule for Bridgman growth of crystals with interface demarcationA growth ampoule for protecting the furnace lining and to prevent a change in the composition of the melt during growth of Pb-T-Te or Ge semiconductors doped with Ga is described. Mo foil is inserted into a quartz tube and sealed at the ends. A vacuum pumping system collapses the tube onto the foil. Spotwelded Mo wires lead in two directions from the collapsed section through quartz capillaries, one of which is also collapsed, on the wire, which provides a contact point for seeded growth of the semiconductor. The ampoule has been used for Bridgeman growth of crystals using a hot zone of 1150 C, with a temperature gradient of 240 C/m, and with current pulses up to 40 A/sq cm.
Document ID
19820039362
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Crouch, R. K.
(NASA Langley Research Center Hampton, VA, United States)
Debnam, W. J.
(NASA Langley Research Center Hampton, VA, United States)
Ryan, R.
(BOMCO, Inc. Gloucester, MA, United States)
Date Acquired
August 10, 2013
Publication Date
January 1, 1982
Publication Information
Publication: Journal of Crystal Growth
Volume: 56
Subject Category
Engineering (General)
Accession Number
82A22897
Distribution Limits
Public
Copyright
Other

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