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Record Details

Record 32 of 18456
Computer-aided prediction of high-frequency performance limits in silicon bipolar integrated circuits
Author and Affiliation:
Burns, J. L.
Choma, J., Jr.
Abstract: A circuit model for an existing silicon integrated bipolar junction transistor (IBJT) is used to evaluate presently achievable high frequency circuit performance. The relationship between circuit model and processing parameters are semi-quantitatively explored to make predictions on the frequency response, which can be achieved through realistic device fabrication modifications. A new figure of merit is introduced, which is defined as the signal frequency at which an integrated bipolar junction transistor can deliver a power gain of G. The most sensitive parameter influencing attainable high frequency IBJT performance is base resistance.
Publication Date: Mar 01, 1982
Document ID:
19820040515
(Acquired Nov 30, 1995)
Accession Number: 82A24050
Subject Category: ELECTRONICS AND ELECTRICAL ENGINEERING
Document Type: Journal Article
Publication Information: IEEE Circuits and Systems Magazine; 4; March 19
Publisher Information: United States
Contract/Grant/Task Num: NAS7-100
Financial Sponsor: NASA; United States
Description: 4p; In English
Distribution Limits: Unclassified; Publicly available; Unlimited
Rights: Copyright
NASA Terms: BIPOLAR TRANSISTORS; COMPUTER TECHNIQUES; INTEGRATED CIRCUITS; NETWORK ANALYSIS; PERFORMANCE PREDICTION; SILICON JUNCTIONS; TRANSISTOR CIRCUITS; FREQUENCY RESPONSE; HIGH FREQUENCIES; MICROWAVE AMPLIFIERS; POWER GAIN
Imprint And Other Notes: IEEE Circuits and Systems Magazine, vol. 4, March 1982, p. 19-22.
Miscellaneous Notes: 19-22
Availability Source: Other Sources
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