NASA Logo

NTRS

NTRS - NASA Technical Reports Server

Back to Results
Small area silicon diffused junction X-ray detectorsThe low-temperature performance of silicon diffused junction detectors in the measurement of low energy X-rays is reported. The detectors have an area of 0.04 sq cm and a thickness of 100 microns. The spectral resolutions of these detectors were found to be in close agreement with expected values, indicating that the defects introduced by the high-temperature processing required in the device fabrication were not deleteriously affecting the detection of low-energy X-rays. Device performance over a temperature range of 77 K to 150 K is given. These detectors were designed to detect low-energy X-rays in the presence of minimum ionizing electrons. The successful application of silicon-diffused junction technology to X-ray detector fabrication may facilitate the development of other novel silicon X-ray detector designs.
Document ID
19820042585
Document Type
Reprint (Version printed in journal)
Authors
Walton, J. T. (California Univ. Berkeley, CA, United States)
Pehl, R. H. (California Univ. Berkeley, CA, United States)
Larsh, A. E. (California, University Berkeley, CA, United States)
Date Acquired
August 10, 2013
Publication Date
February 1, 1982
Subject Category
INSTRUMENTATION AND PHOTOGRAPHY
Funding Number(s)
CONTRACT_GRANT: NAS7-100
CONTRACT_GRANT: W-7405-ENG-48
Distribution Limits
Public
Copyright
Other