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Monolithic integration of a GaAlAs buried-heterostructure laser and a bipolar phototransistorA GaAlAs buried-heterostructure laser has been monolithically integrated with a bipolar phototransistor. The heterojunction transistor was formed by the regrowth of the burying layers of the laser. Typical threshold current values for the lasers were 30 mA. Common-emitter current gains for the phototransistor of 100-400 and light responsitivity of 75 A/W (for wavelengths of 0.82 micron) at collector current levels of 15 mA were obtained.
Document ID
19820043469
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Bar-Chaim, N.
(California Inst. of Tech. Pasadena, CA, United States)
Harder, CH.
(California Inst. of Tech. Pasadena, CA, United States)
Margalit, S.
(California Inst. of Tech. Pasadena, CA, United States)
Yariv, A.
(California Institute of Technology Pasadena, CA, United States)
Katz, J.
(California Institute of Technology, Jet Propulsion Laboratory; California Institute of Technology, Pasadena CA, United States)
Ury, I.
(Ortel Corp. Alhambra, CA, United States)
Date Acquired
August 10, 2013
Publication Date
April 1, 1982
Publication Information
Publication: Applied Physics Letters
Volume: 40
Subject Category
Lasers And Masers
Accession Number
82A27004
Distribution Limits
Public
Copyright
Other

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