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A study of the initial oxidation of evaporated thin films of aluminum by AES, ELS, and ESDThe room temperature, low pressure, oxidation of evaporated aluminum thin films has been studied by AES, ELS, and ESD. ESD was the most sensitive of the three methods to characterize a clean aluminum surface. Two oxidation stages were distinguished in the 0-3000 L oxygen exposure range. Between 0 and 50 L, the chemisorption of oxygen atoms was characterized by a fast decrease of the 67 eV AES Al peak and the 10 eV surface plasmon peak, and by a simultaneous increase of the oxygen AES and ESD signals. After 50 L, a change in slope in all AES and ESD signal variations was attributed to the slow growth of a thin layer of aluminum oxide, which after 3000 L was still only a few angstroms thick.
Document ID
19820046798
Document Type
Reprint (Version printed in journal)
Authors
Bujor, M.
(NASA Ames Research Center Moffett Field, CA, United States)
Larson, L. A.
(NASA Ames Research Center Moffett Field, CA, United States)
Poppa, H.
(NASA Ames Research Center; Stanford Joint Institute for Surface and Microstructure Research Moffett Field, CA, United States)
Date Acquired
August 10, 2013
Publication Date
March 1, 1982
Subject Category
Inorganic And Physical Chemistry
Distribution Limits
Public
Copyright
Other
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