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The chemical structure of trapped charge sites formed at the Si/SiO2 interface by ionizing radiation as determined by XPS
Document ID
19820046804
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Grunthaner, F. J. (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Lewis, B. F. (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Maserjian, J. (California Institute of Technology, Jet Propulsion Laboratory, Pasadena CA, United States)
Madhukar, A. (Southern California, University Los Angeles, CA, United States)
Date Acquired
August 10, 2013
Publication Date
March 1, 1982
Subject Category
Solid-State Physics
Accession Number
82A30339
Funding Number(s)
CONTRACT_GRANT: NAS7-100
Distribution Limits
Public
Copyright
Other

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