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Transient behavior of an actively mode-locked semiconductor laser diodeExperimental investigation was carried out to study the transient regimes during the buildup and decay of the active mode-locked state in a laser diode. The mode locking was achieved through a sinusoidal modulation of the diode current with the laser in an external cavity. The pulse shape evolution and the time constants for the buildup and decay were determined.
Document ID
19820054386
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
doi:10.1063/1.93449
Authors
Auyeung, J. C. (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Bergman, L. A. (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Johnston, A. R. (California Institute of Technology, Jet Propulsion Laboratory, Pasadena CA, United States)
Date Acquired
August 10, 2013
Publication Date
July 15, 1982
Publication Information
Publication: Applied Physics Letters
Volume: 41
Subject Category
Lasers And Masers
Accession Number
82A37921
Distribution Limits
Public
Copyright
Other

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