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OM-VPE growth of Mg-doped GaAsThe epitaxial growth of Mg-doped GaAs by the organometallic vapor phase epitaxial process (OM-VPE) has been achieved for the first time. The doping is controllable over a wide range of input fluxes of bis (cyclopentadienyl) magnesium, (C5H5)2Mg, the organometallic precursor to Mg.
Document ID
19820054876
Document Type
Reprint (Version printed in journal)
Authors
Lewis, C. R. (Varian Associates Palo Alto, CA, United States)
Dietze, W. T. (Varian Associates Palo Alto, CA, United States)
Ludowise, M. J. (Varian Corporate Solid State Laboratory, Palo Alto, CA, United States)
Date Acquired
August 10, 2013
Publication Date
June 24, 1982
Publication Information
Publication: Electronics Letters
Volume: 18
Subject Category
Solid-State Physics
Accession Number
82A38411
Funding Number(s)
CONTRACT_GRANT: NAS3-22232
Distribution Limits
Public
Copyright
Other

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