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A thermochemical model of radiation damage and annealing applied to GaAs solar cellsCalculations of the equilibrium conditions for continuous radiation damage and thermal annealing are reported. The calculations are based on a thermochemical model developed to analyze the incorporation of point imperfections in GaAs, and modified by introducing the radiation to produce native lattice defects rather than high-temperature and arsenic atmospheric pressure. The concentration of a set of defects, including vacancies, divacancies, and impurity vacancy complexes, are calculated as a function of temperature. Minority carrier lifetimes, short circuit current, and efficiency are deduced for a range of equilibrium temperatures. The results indicate that GaAs solar cells could have a mission life which is not greatly limited by radiation damage.
Document ID
19820061400
Acquisition Source
Legacy CDMS
Document Type
Conference Proceedings
Authors
Conway, E. J.
(NASA Langley Research Center Hampton, VA, United States)
Walker, G. H.
(NASA Langley Research Center Hampton, VA, United States)
Heinbockel, J. H.
(Old Dominion University Norfolk, VA, United States)
Date Acquired
August 10, 2013
Publication Date
January 1, 1981
Subject Category
Energy Production And Conversion
Meeting Information
Meeting: Photovoltaic Specialists Conference
Location: Kissimmee, FL
Start Date: May 12, 1981
End Date: May 15, 1981
Accession Number
82A44935
Distribution Limits
Public
Copyright
Other

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