A thermochemical model of radiation damage and annealing applied to GaAs solar cellsCalculations of the equilibrium conditions for continuous radiation damage and thermal annealing are reported. The calculations are based on a thermochemical model developed to analyze the incorporation of point imperfections in GaAs, and modified by introducing the radiation to produce native lattice defects rather than high-temperature and arsenic atmospheric pressure. The concentration of a set of defects, including vacancies, divacancies, and impurity vacancy complexes, are calculated as a function of temperature. Minority carrier lifetimes, short circuit current, and efficiency are deduced for a range of equilibrium temperatures. The results indicate that GaAs solar cells could have a mission life which is not greatly limited by radiation damage.
Document ID
19820061400
Acquisition Source
Legacy CDMS
Document Type
Conference Proceedings
Authors
Conway, E. J. (NASA Langley Research Center Hampton, VA, United States)
Walker, G. H. (NASA Langley Research Center Hampton, VA, United States)
Heinbockel, J. H. (Old Dominion University Norfolk, VA, United States)