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A theory of the n-i-p silicon solar cellA computer model has been developed, based on an analytical theory of the high base resistivity BSF n(+)(pi)p(+) or p(+)(nu)n(+) silicon solar cell. The model makes very few assumptions and accounts for nonuniform optical generation, generation and recombination in the junction space charge region, and bandgap narrowing in the heavily doped regions. The paper presents calculated results based on this model and compares them to available experimental data. Also discussed is radiation damage in high base resistivity n(+)(pi)p(+) space solar cells.
Document ID
19820061520
Acquisition Source
Legacy CDMS
Document Type
Conference Proceedings
Authors
Goradia, C.
(Cleveland State University Cleveland, OH, United States)
Weinberg, I.
(Cleveland State Univ. OH, United States)
Baraona, C.
(NASA Lewis Research Center Cleveland, OH, United States)
Date Acquired
August 10, 2013
Publication Date
January 1, 1981
Subject Category
Energy Production And Conversion
Meeting Information
Meeting: Photovoltaic Specialists Conference
Location: Kissimmee, FL
Start Date: May 12, 1981
End Date: May 15, 1981
Accession Number
82A45055
Funding Number(s)
CONTRACT_GRANT: NAG3-144
Distribution Limits
Public
Copyright
Other

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