Apparatus and technique for pulsed electron beam annealing for solar cell productionMany of the demands of high-throughput processing of solar cells can be satisfied by transient methods using pulsed electron beams. A prototype pulsed electron beam processor for solar cell production has been built, and is intended for automated annealing of solar cell junction ion implantation at a rate of 1200-1800 silicon wafers per hour. Other applications include solar cell junctions by pulse diffusion, annealing of ion-implanted back surface fields, and pulse sintering of cell metallization.
Document ID
19820061538
Acquisition Source
Legacy CDMS
Document Type
Conference Proceedings
Authors
Landis, G. A. (Spire Corp. Bedford, MA, United States)
Armini, A. J. (Spire Corp. Bedford, MA, United States)
Greenwald, A. C. (Spire Corp. Bedford, MA, United States)
Kiesling, R. A. (Spire Corp. Bedford, MA, United States)