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Apparatus and technique for pulsed electron beam annealing for solar cell productionMany of the demands of high-throughput processing of solar cells can be satisfied by transient methods using pulsed electron beams. A prototype pulsed electron beam processor for solar cell production has been built, and is intended for automated annealing of solar cell junction ion implantation at a rate of 1200-1800 silicon wafers per hour. Other applications include solar cell junctions by pulse diffusion, annealing of ion-implanted back surface fields, and pulse sintering of cell metallization.
Document ID
19820061538
Acquisition Source
Legacy CDMS
Document Type
Conference Proceedings
Authors
Landis, G. A.
(Spire Corp. Bedford, MA, United States)
Armini, A. J.
(Spire Corp. Bedford, MA, United States)
Greenwald, A. C.
(Spire Corp. Bedford, MA, United States)
Kiesling, R. A.
(Spire Corp. Bedford, MA, United States)
Date Acquired
August 10, 2013
Publication Date
January 1, 1981
Subject Category
Engineering (General)
Meeting Information
Meeting: Photovoltaic Specialists Conference
Location: Kissimmee, FL
Start Date: May 12, 1981
End Date: May 15, 1981
Accession Number
82A45073
Distribution Limits
Public
Copyright
Other

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