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Epitaxial thin film GaAs solar cells using OM-CVD techniquesA new approach has been initiated at JPL to fabricate thin-film, high efficiency GaAs solar cells on low-cost, single-crystal Si substrates having a thin CVD interlayer of Ge to minimize the lattice and thermal expansion mismatch. For initial experiments, n(+)/p GaAs cells were grown by OM-CVD on single-crystal GaAs and Ge wafers. Details of the growths and performance results will be presented. Subsequently, a combined epitaxial structure of OM-CVD GaAs on a strongly adherent Ge interlayer on (100) Si was grown. This is the first report of the successful growth of this composite structure. Low module costs projected by JPL SAMICS methodology calculations and the potential for 400-600W/kg space solar arrays will be discussed.
Document ID
19820061551
Acquisition Source
Legacy CDMS
Document Type
Conference Proceedings
Authors
Stirn, R. J.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Wang, K. L.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Yeh, Y. C. M.
(California Institute of Technology, Jet Propulsion Laboratory, Pasadena CA, United States)
Date Acquired
August 10, 2013
Publication Date
January 1, 1981
Subject Category
Solid-State Physics
Meeting Information
Meeting: Photovoltaic Specialists Conference
Location: Kissimmee, FL
Start Date: May 12, 1981
End Date: May 15, 1981
Accession Number
82A45086
Funding Number(s)
CONTRACT_GRANT: NAS7-100
Distribution Limits
Public
Copyright
Other

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