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Application of the regular associated solution model to the Cd-Te and Hg-Te binary systemsThe regular associated solution model is used to treat the phase diagrams of the binary II-VI semiconductor alloy systems Hg-Te and Cd-Te. The equations for the species activity coefficients are used without approximations regarding the magnitudes of the various binary interchange energies or the functional dependence on component mol fraction. The values of the four-adjustable parameters required for description of each system are fixed by fitting liquidus data, and the resulting activity coefficients are used to calculate component partial pressures, which are compared with experimental values as an indpendent check of the validity of the model. The results show that the regular associated solution model provides a usefully accurate, but not complete, description for both the Hg-Te and Cd-Te systems. The relationship of this work to previous investigations is discussed.
Document ID
19820062980
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Kelley, J. D.
(McDonnell-Douglas Corp. Saint Louis, MO, United States)
Martin, B. G.
(McDonnell Douglas Research Laboratories St. Louis, MO, United States)
Szofran, F. R.
(McDonnell-Douglas Corp. Saint Louis, MO, United States)
Lehoczky, S. L.
(NASA Marshall Space Flight Center Space Science Laboratory, Huntsville, AL; McDonnell Douglas Research Laboratories, St. Louis, MO, United States)
Date Acquired
August 10, 2013
Publication Date
October 1, 1982
Publication Information
Publication: Electrochemical Society
Subject Category
Inorganic And Physical Chemistry
Accession Number
82A46515
Distribution Limits
Public
Copyright
Other

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