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Effect of melt stoichiometry on twin formation in LEC GaAsIt is shown that the incidence of twin formation in large diameter, undoped, (100) LEC GaAs is reduced when the melt composition is slightly As-rich. Twenty GaAs crystals were grown from stoichiometric and nonstoichiometric melts. The results suggest that the barrier to twin formation is related to the stoichiometry of the solid at the solidification front.
Document ID
19820062982
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Chen, R. T. (Rockwell International Corp. Thousand Oaks, CA, United States)
Holmes, D. E. (Rockwell International Microelectronics Research and Development Center Thousand Oaks, CA, United States)
Date Acquired
August 10, 2013
Publication Date
October 1, 1982
Publication Information
Publication: Electrochemical Society
Subject Category
Solid-State Physics
Accession Number
82A46517
Funding Number(s)
CONTRACT_GRANT: NAS3-22224
Distribution Limits
Public
Copyright
Other

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