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High Power Switching TransistorImproved switching transistors handle 400-A peak currents and up to 1,200 V. Using large diameter silicon wafers with twice effective area as D60T, form basis for D7 family of power switching transistors. Package includes npn wafer, emitter preform, and base-contact insert. Applications are: 25to 50-kilowatt high-frequency dc/dc inverters, VSCF converters, and motor controllers for electrical vehicles.
Document ID
19830000127
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Hower, P. L.
(Westinghouse Electric Corp.)
Kao, Y. C.
(Westinghouse Electric Corp.)
Carnahan, D. C.
(Westinghouse Electric Corp.)
Date Acquired
August 11, 2013
Publication Date
October 1, 1983
Publication Information
Publication: NASA Tech Briefs
Volume: 7
Issue: 4
ISSN: 0145-319X
Subject Category
Electronic Components And Circuits
Report/Patent Number
LEW-13728
Accession Number
83B10127
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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