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Electron Beam Could Probe Recombination CentersElectron beam probe technique estimate electron/hole capture cross sections in semiconductors with wide band gaps. Amplitude-modulated electron beam induces short-circuit current collected by ohmic contacts. Phase shift between this current and electron-beam current measured as function of frequency. Results of measurements used to ascertain recombination rates and energy levels.
Document ID
19830000141
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Vonroos, O.
(CALTECH)
Date Acquired
August 11, 2013
Publication Date
October 1, 1983
Publication Information
Publication: NASA Tech Briefs
Volume: 7
Issue: 4
ISSN: 0145-319X
Subject Category
Physical Sciences
Report/Patent Number
NPO-15285
Accession Number
83B10141
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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