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Starting Silicon-Ribbon Growth AutomaticallySemiautomatic system starts growth of silicon sheets more reliably than system with purely manual control. Control signals for starting sheetcrystal growth consist of ramps (during which signal changes linearly from one value to another over preset time interval) and soaks (during which signal remains constant). Ramps and soaks for best temperature and pulling speed determined by experimentation.
Document ID
19830000458
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Mchugh, J. P. (Westinghouse Electric Corp.)
Date Acquired
August 11, 2013
Publication Date
April 1, 1984
Publication Information
Publication: NASA Tech Briefs
Volume: 8
Issue: 1
ISSN: 0145-319X
Subject Category
Fabrication Technology
Report/Patent Number
NPO-15919
Accession Number
83B10458
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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