NASA Logo

NTRS

NTRS - NASA Technical Reports Server

Back to Results
Growing Single Crystals From Low-Purity SiliconHeat exchanger method continuously moves impurities to outside of growth interface. Silicon heated in crucible to above melting point, and melted silicon then solidified by extracting heat from bottom of crucible by means of heat exchanger.
Document ID
19830000472
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Schmid, F.
(Crystal Systems, Inc.)
Date Acquired
August 11, 2013
Publication Date
April 1, 1984
Publication Information
Publication: NASA Tech Briefs
Volume: 8
Issue: 1
ISSN: 0145-319X
Subject Category
Fabrication Technology
Report/Patent Number
NPO-15538
Accession Number
83B10472
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

Available Downloads

There are no available downloads for this record.
No Preview Available