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Modified Fabrication for InGaAsP Strip LaserImproved fabrication of InGaAsP stripe lasers involves replacement of oxide stripe in quaternary laser by an n-type layer of InP grown on top of quaternary cap layer. Process allows use of stop etch that selectively removes InP and does not etch InGaAsP, making fabrication especially convenient.
Document ID
19830000705
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Ladany, I. (RCA Corp.)
Furman, T. R. (RCA Corp.)
Date Acquired
August 11, 2013
Publication Date
December 1, 1984
Publication Information
Publication: NASA Tech Briefs
Volume: 8
Issue: 2
ISSN: 0145-319X
Subject Category
Fabrication Technology
Report/Patent Number
LAR-12986
Accession Number
83B10705
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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