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Silicon crystal growth in vacuumThe most developed process for silicon crystal growth is the Czochralski (CZ) method which was in production for over two decades. In an effort to reduce cost of single crystal silicon for photovoltaic applications, a directional solidification technique, Heat Exchanger Method (HEM), was adapted. Materials used in HEM and CZ furnaces are quite similar (heaters, crucibles, insulation, etc.). To eliminate the cost of high purity argon, it was intended to use vacuum operation in HEM. Two of the major problems encountered in vacuum processing of silicon are crucible decomposition and silicon carbide formation in the melt.
Document ID
Acquisition Source
Legacy CDMS
Document Type
Khattak, C. P.
(Crystal Systems, Inc. Salem, MA, United States)
Schmid, F.
(Crystal Systems, Inc. Salem, MA, United States)
Date Acquired
August 11, 2013
Publication Date
December 1, 1982
Publication Information
Publication: Silicon Ingot Casting, Phase 3 and Phase 4
Subject Category
Energy Production And Conversion
Accession Number
Distribution Limits
Work of the US Gov. Public Use Permitted.

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