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Origin of SiC impurities in silicon crystals grown from the melt in vacuumsA main source of high carbon levels in silicon crystals grown from melt under reduced pressures and contained in silica crucibles supported by graphite retainer/susceptor was identified by thermodynamic analysis. The calculations were verified by experimental results and the carbon level is reduced by approximately 50% with the use of molybdenum retainers.
Document ID
19830016761
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Schmid, F. (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Khattak, C. P. (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Digges, T. G., Jr. (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA, United States)
Kaufman, L. (Manlabs, Inc., Cambridge Mass., United States)
Date Acquired
August 11, 2013
Publication Date
December 1, 1982
Publication Information
Publication: Crystal Systems, Inc. Silicon Ingot Casting, Phase 3 and Phase 4
Subject Category
Energy Production And Conversion
Accession Number
83N25032
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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