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Evaluation of the ion implantation process for production of solar cells from silicon sheet materialsThe objective of this program is the investigation and evaluation of the capabilities of the ion implantation process for the production of photovoltaic cells from a variety of present-day, state-of-the-art, low-cost silicon sheet materials. Task 1 of the program concerns application of ion implantation and furnace annealing to fabrication of cells made from dendritic web silicon. Task 2 comprises the application of ion implantation and pulsed electron beam annealing (PEBA) to cells made from SEMIX, SILSO, heat-exchanger-method (HEM), edge-defined film-fed growth (EFG) and Czochralski (CZ) silicon. The goals of Task 1 comprise an investigation of implantation and anneal processes applied to dendritic web. A further goal is the evaluation of surface passivation and back surface reflector formation. In this way, processes yielding the very highest efficiency can be evaluated. Task 2 seeks to evaluate the use of PEBA for various sheet materials. A comparison of PEBA to thermal annealing will be made for a variety of ion implantation processes.
Document ID
19830027222
Acquisition Source
Legacy CDMS
Document Type
Contractor Report (CR)
Authors
Spitzer, M. B.
(Spire Corp. Bedford, MA, United States)
Date Acquired
September 4, 2013
Publication Date
June 1, 1983
Subject Category
Energy Production And Conversion
Report/Patent Number
NASA-CR-173126
QR-10085-02
JPL-9950-864
NAS 1.26:173126
Accession Number
83N35493
Funding Number(s)
CONTRACT_GRANT: JPL-956381
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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