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A 1 watt GaAs power amplifier for the NASA 30/20 GHz communication systemA multistage GaAs FET power amplifier, employing cascaded balanced stages using state-of-the-art 1/4, 1/2, and 1 watt devices, has been developed. A linear gain of 30 dB with 1.25 watts output has been achieved over a 17.7 to 19.4 GHz frequency band. The development and performance of the amplifier and its components are discussed.
Document ID
19830030271
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Goel, J. (TRW, Inc. Redondo Beach, CA, United States)
Oransky, G. (TRW, Inc. Redondo Beach, CA, United States)
Yuan, S. (TRW, Inc. Redondo Beach, CA, United States)
Osullivan, P. (TRW, Inc. Redondo Beach, CA, United States)
Burch, J. (TRW, Inc. Advanced Microwave Technology Dept., Redondo Beach, CA, United States)
Date Acquired
August 11, 2013
Publication Date
June 1, 1982
Subject Category
Electronics And Electrical Engineering
Meeting Information
Meeting: Institute of Electrical and Electronics Engineers, International Microwave Symposium
Location: Dallas, TX
Start Date: June 15, 1982
End Date: June 17, 1982
Accession Number
83A11489
Funding Number(s)
CONTRACT_GRANT: NAS3-22503
Distribution Limits
Public
Copyright
Other

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