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Dependence of barrier height on energy gap in Au n-type GaAs/1-x/P/x/ Schottky diodesData are presented which show that the Schottky barrier height for gold on the ternary compound GaAs(1-x)P(x) follows the commonly assumed two-thirds of the band gap relationship. An explanation is given for the reason that previously published data did not exhibit this behavior.
Document ID
19830030566
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Stirn, R. J.
(California Institute of Technology, Jet Propulsion Laboratory, Pasadena CA, United States)
Date Acquired
August 11, 2013
Publication Date
January 1, 1981
Publication Information
Publication: Applied Physics Communications
Volume: 1
Issue: 1, 19
Subject Category
Solid-State Physics
Accession Number
83A11784
Funding Number(s)
CONTRACT_GRANT: NAS7-100
Distribution Limits
Public
Copyright
Other

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